Research on Perovskite-based memristor
Memristors named as compound words of memory and resistor refer to memory devices which save data by resistive switching. Structure of memristor devices is composed of top metal electrode, switching medium and bottom electrode. Due to this simple device structure. Lower cell size and high writing speed than those of other next generation memory devices can be realized theoretically. Various materials such as oxide, organic and chalcogenide have been applied to memristor. However, they have been suffered from high operating voltage over 1V and low on/off ratio less than 10^3, which drops efficiency of memristor devices. To solve these problems, halide perovskite materials have been applied to memristor devices from 2016 because halide perovskite materials exhibit operating voltage less than 0.5 V and higher on/off ratio than 10^5 because of low activation energy for ion migration and ultra-low dark current. Purpose of our group’s memristor research is to develop memristor devices with high performance based on halide perovskite materials. Up to now, our group has developed memristor devices which show operating voltage less than 0.3 V and on/off ratio higher than 10^7 by using 0,1,2 and 3-dimensional halide perovskite materials. For research related to memristor devices based on halide perovskite materials, students and collaboration work is welcomed.