Publications

[11] O.-Y. Gong, M.-K. Seo, J.-H. Choi, S.-Y. Kim, D.-H. Kim, I.-S. Cho, N.-G. Park, G.-S. Han, H.-S. Jung, High-performing laminated perovskite solar cells by surface engineering of perovskite films. ​Appl. Surf. Sci.​ 2022, ​591, 153148

[10] J.-M. Yang, J.-H. Lee, Y.-K. Jung, S.-Y. Kim, J.-H. Kim, S.-G. Kim, J.-H. Kim, S. Seo, D.-A. Park, J.-W. Lee, A. Walsh, J.-H. Park, N.-G. Park, Mixed-dimensional formamidinium bismuth iodides featuring in-situ formed Type-Ⅰ band structure for convolution neural networks. Adv. Sci. ​2022​, 9, 14, 2200168.

[9] S.-Y. Kim, D.-A. Park, N.-G. Park, Synthetic powder-based thin (<0.1 ㎛) Cs₃Bi₂Br₉ perovskite films for air-stable and viable resistive switching memory. ACS Appl. Electron. Mater. ​2022​, 4, 5, 2388-2395.

[8] J.-H. Lee, J.-M. Yang, S.-Y. Kim, S. Baek, S. Lee, S.-J. Lee, N.-G. Park, J.-W. Lee, Intact metal/metal halide van der Waals junction enables reliable memristive switching with high endurance.  ​Adv. Funct. Mater.​ ​2021​, 2214142

[7] J.-M. Yang, Y.-K. Jung, J.-H. Lee, Y. C. Kim, S.-Y. Kim, D.-A. Park, J.-H. Kim, S.-Y. Jeong, S. Seo, J.-H. Park, I. Han, A. Walsh, N.-G. Park, Asymmetric carrier transport in flexible interface-type memristor en​ables artificial synapses with sub-femtojoule energy consumption, Nanoscale Horiz., 2021, 6, 987-997.

[6] S.-Y. Kim, J.-M. Yang, S.-H. Lee, N.-G. Park, A layered (n-C₄H₉NH₃)₂CsAgBiBr₇ perovskite for bipolar resistive switching memory with a high ON/OFF ratio, Nanoscale, 2021, 13, 12475-12483. 

[5] D.-H. Kang, S.-Y. Kim, J.-W. Lee, N.-G. Park, Efficient surface passivation of perovskite films by a post-treatment method with a minimal dose, J. Mater. Chem. A, 2021, 9, 6, 3441-3450

[4] S.-Y. Kim, J.-M. Yang, E.-S. Choi, N.-G. Park, Layered (C₆H₅CH₂NH₃)₂CuBr₄ perovskite for multilevel storage resistive switching memory, Adv. Funct. Mater., 2020, 2002653

[3] S.-Y. Kim, J.-M. Yang, E.-S. Choi, N.-G., Effect of interlayer spacing in layered perovskites on resistive switching memory, Nanoscale, 2019, 11, 30, 14330-14338

[2] E.-S. Choi, J.-M. Yang,  N.-G., S.-G. Kim, C. Cuhadar, S.-Y. Kim, S.-H. Kim, D. Lee, N.-G. Park, The effect of compositional engineering of imidazolium lead iodide on the resistive switching properties, Nanoscale, 2019, 11, 30, 14455-14464

[1] J.-M. Yang, E.-S. Choi, S.-Y. Kim, J.-H. Kim, J.-H. Park, N.-G. Park, Perovskite-related (CH₃NH₃)₃Sb₂Br₉ for forming-free memristor and low-energy-consuming neuromorphic computing, Nanoscale, 2019, 11, 13, 6453-6461