Publications

[4]​ S.-Y. Kim, J.-M. Yang, E.-S. Choi and N.-G. Park, Layered (C₆H₅CH₂NH₃)₂CuBr₄ perovskite for multilevel storage resistive switching memory, Adv. Funct. Mater., 2020, 30, 2002653

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[3] E.-S. Choi, J.-M. Yang, S.-G. Kim, C. Cuhadar, S.-Y. Kim, S. H. Kim, D. Lee, and N.-G. Park, The effect of compositional engineering of imidazolium lead iodide on the resistive switching properties, Nanoscale, 2019, 11, 14455

[2] S.-Y. Kim, J.-M. Yang, E.-S. Choi, and N.-G Park, Effect of interlayer spacing in layered perovskites on resistive switching memory, Nanoscale, 2019, 11, 14330

[1] J.-M. Yang, E.-S. Choi, S.-Y. Kim, J.-H. Kim, J.-H. Park, and N.-G. Park, Perovskite-related (CH₃NH₃)₃Sb₂Br₉ forming-free memristor and low-energy-consuming neuromorhpic computing, Nanoscale, 2019, 11, 6453