Publications

[7] J.-M. Yang, Y.-K. Jung, J.-H. Lee, Y. C. Kim, S.-Y. Kim, D.-A. Park, J.-H. Kim, S.-Y. Jeong, S. Seo, J.-H. Park, I. Han, A. Walsh, N.-G. Park, Asymmetric Carrier Transport in Flexible Interface-type Memristor En​ables Artificial Synapses with Sub-Femtojoule Energy Consumption, Nanoscale Horiz., 2021, 6, 987-997.

[6] S.-Y. Kim, J.-M. Yang, S.-H. Lee, N.-G. Park, A layered (n-C₄H₉NH₃)₂CsAgBiBr₇ perovskite for bipolar resistive switching memory with a high ON/OFF ratio, Nanoscale, 2021, 13, 12475-12483. 

[5] D.-H. Kang, S.-Y. Kim, J.-W. Lee, N.-G. Park, Efficient surface passivation of perovskite films by a post-treatment method with a minimal dose, J. Mater. Chem. A, 2021, 9, 6, 3441-3450

[4] S.-Y. Kim, J.-M. Yang, E.-S. Choi, N.-G. Park, Layered (C6H5CH2NH3)2CuBr4 perovskite for multilevel storage resistive switching memory, Adv. Funct. Mater., 2020, 2002653

[3] S.-Y. Kim, J.-M. Yang, E.-S. Choi, N.-G., Effect of interlayer spacing in layered perovskites on resistive switching memory, Nanoscale, 2019, 11, 30, 14330-14338

[2] E.-S. Choi, J.-M. Yang,  N.-G., S.-G. Kim, C. Cuhadar, S.-Y. Kim, S.-H. Kim, D. Lee, N.-G. Park, The effect of compositional engineering of imidazolium lead iodide on the resistive switching properties, Nanoscale, 2019, 11, 30, 14455-14464

[1] J.-M. Yang, E.-S. Choi, S.-Y. Kim, J.-H. Kim, J.-H. Park, N.-G. Park, Perovskite-related (CH3NH3)3Sb2Br9 for forming-free memristor and low-energy-consuming neuromorphic computing, Nanoscale, 2019, 11, 13, 6453-6461