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Researchers

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June-Mo Yang

Joined since March, 2017
E-mail revers123@skku.edu
Education B.S. (2017) SungKyunKwan University
Research Resistive Memory & Neuromorphic Computing

Publications

[13] J.-M. Yang, Y.-K. Jung, J.-H. Lee, Y. C. Kim, S.-Y. Kim, D.-A. Park, J.-H. Kim, S.-Y. Jeong, S. Seo, J.-H. Park, I. Han, A. Walsh, N.-G. Park, Asymmetric Carrier Transport in Flexible Interface-type Memristor Enables Artificial Synapses with Sub-Femtojoule Energy Consumption, Nanoscale Horiz., 2021, 6, 987-997


[12] S.-Y. Kim, J.-M. Yang, S.-H. Lee, N.-G. Park, A layered (n-C4H9NH3)2CsAgBiBr7 perovskite for bipolar resistive switching memory with a high ON/OFF ratio, Nanoscale, 2021, 13, 12475-12483.

[11] S.-Y. Kim, J.-M. Yang, E.-S. Choi, N.-G. Park, Layered (C6H5CH2NH3)2CuBr4 Perovskite for Multilevel Storage Resistive Switching Memory, Adv. Funct. Mater.202030, 2002653


[10] 285. D.-N. Jeong, J.-M. Yang, N.-G. Park, Roadmap on halide perovskite and related devices, Nanotechnology, 2020, 31, 152001


[9] J.-W. Lee, S.-G. Kim, J.-M. Yang, Y. Yang, N.-G. Park, Verification and mitigation of ion migration in perovskite solar cells, APL Mater., 2019, 7, 041111


[8] S.-G. Kim, C. Li, A. Guerrero, J.-M. Yang, Y. Zhong, J. Bisquert, S. Huettner, N.-G. Park, Potassium ions as a kinetic controller in ionic double layers for hysteresis-free perovskite solar cells, J. Mater. Chem. A, 2019, 7, 32, 18807-18815


[7] E.-S. Choi, J.-M. Yang, S.-G. Kim, C. Cuhadar, S.-Y. Kim, S.H. Kim, D. Lee, N.-G. Park, The effect of compositional engineering of imidazolium lead iodide on the resistive switching properties, Nanoscale, 2019, 11, 30, 14455-14464


[6] S.-Y. Kim, J.-M. Yang, E.-S. Choi, N.-G. Park, Effect of interlayer spacing in layered perovskites on resistive switching memory, Nanoscale, 2019, 11, 30, 14330-14338


[5] J.-M. Yang, E.-S. Choi, S.-Y. Kim, J.-H. Kim, J.-H. Park, N.-G. Park, Perovskite-related (CH 3 NH 3) 3 Sb 2 Br 9 for forming-free memristor and low-energy-consuming neuromorphic computing, Nanoscale, 2019, 11, 13, 6453-6461


[4]. J.‐M. Yang, S.‐G. Kim, J.‐Y. Seo, C. Cuhadar, D.‐Y. Son, D. Lee, N.‐G. Park,1D Hexagonal HC(NH2)2PbI3 for Multilevel Resistive Switching Nonvolatile Memory. Adv. Electron. Mater., 20184, 9, 1800190


[3] C. Cuhadar, S.-G. Kim, J.-M. Yang, J.-Y. Seo, D. Lee, N.-G. Park, All-Inorganic Bismuth Halide Perovskite-like Materials A3Bi2I9 and A3Bi1.8Na0.2I8.6 (A = Rb and Cs) for Low-Voltage Switching Resistive Memory, ACS Appl. Mater. Interfaces, 2018, 10, 35, 29741-29749


[2] J.-Y. Seo, J. Choi, H.-S. Kim, J. Kim, J.-M. Yang, C. Cuhadar, J. S. Han, S.-J. Kim, D. Lee, H. W. Jang, N.-G. Park, Wafer-Scale Reliable Switching Memory based on 2-Dimensional Layered Organic-Inorganic Halide Perovskite, Nanoscale, 2017, 9, 15278-15285


[1] J.-W. Lee, Y. J. Choi, J.-M. Yang, S. Ham, S. K. Jeon, J. Y. Lee, Y.-H. Song, E. K. Ji, D.-H. Yoon, S. Seo, H. Shin, G. S. Han, H. S. Jung, D. Kim, N.-G. Park, In-Situ Formed Type I Nanocrystalline Perovskite Film for Highly Efficient Light-Emitting Diode, ACS Nano, 201711, 3311-3319